PT Journal
AU Horvath, Z
   Basa, P
   Jaszi, T
   Pap, A
   Molnar, G
   Kovalev, A
   Wainstein, D
   Gerlai, T
   Turmezei, P
TI Silicon Nitride Based Non-Volatile Memory Structures with Embedded Si or Ge Nanocrystals
SO Communications - Scientific Letters of the University of Zilina
PY 2010
BP 19
EP 22
VL 12
IS 2
DI 10.26552/com.C.2010.2.19-22
WP https://komunikacie.uniza.sk/artkey/csl-201002-0004.php
DE no keywords
SN 13354205
AB Memory structures with an embedded sheet of separated Si or Ge nanocrystals were prepared by low pressure chemical vapour deposition using a Si3N4 control and SiO2 tunnel layers. It was obtained that a properly located layer of semiconductor nanocrystals can improve both the charging and retention behaviour of the MNOS structures simultaneously. Memory window width of above 6 V and retention time of 272 years was achieved for charging pulses of 15 V, 10 ms.
ER