RT Journal Article
SR Electronic
A1 Horvath, Zsolt J.
A1 Basa, P.
A1 Jaszi, T.
A1 Pap, A. E.
A1 Molnar, Gy.
A1 Kovalev, A. I.
A1 Wainstein, D. L.
A1 Gerlai, T.
A1 Turmezei, P.
T1 Silicon Nitride Based Non-Volatile Memory Structures with Embedded Si or Ge Nanocrystals
JF Communications - Scientific Letters of the University of Zilina
YR 2010
VO 12
IS 2
SP 19
OP 22
DO 10.26552/com.C.2010.2.19-22
UL https://komunikacie.uniza.sk/artkey/csl-201002-0004.php
AB Memory structures with an embedded sheet of separated Si or Ge nanocrystals were prepared by low pressure chemical vapour deposition using a Si3N4 control and SiO2 tunnel layers. It was obtained that a properly located layer of semiconductor nanocrystals can improve both the charging and retention behaviour of the MNOS structures simultaneously. Memory window width of above 6 V and retention time of 272 years was achieved for charging pulses of 15 V, 10 ms.