Communications - Scientific Letters of the University of Zilina 2003, 5(2):29-32 | DOI: 10.26552/com.C.2003.2.29-32

Semiconductor Lasers Based on Quantum Well Structures

Dusan Pudis1, J. Kovac, Jr.2, J. Kovac2, J. Jakabovic3
1 University of Zilina, Department of Physics, Slovakia
2 International Laser Center, Bratislava, Slovakia
3 Slovak Technical University, Department of Microelectronics, Bratislava, Slovakia

We present electrical and optical properties of the quantum well laser structures based on InAs / AlxGa1-x As material systems. The experimental results obtained from room- and low temperature electroluminescence measurements of InAs/Al0.40Ga0.60 As revealed the excellent emission spectra in the visible range 620-660 nm. The experimentally obtained transitions energies were compared with simple Kronig-Penney simulations. Going to low temperatures the stimulated emission from the cleaved edge was observed, which could be real perspective for laser applications.

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Published: June 30, 2003  Show citation

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Pudis, D., Kovac, J., Kovac, J., & Jakabovic, J. (2003). Semiconductor Lasers Based on Quantum Well Structures. Communications - Scientific Letters of the University of Zilina, 5(2), 29-32. doi: 10.26552/com.C.2003.2.29-32
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