Communications - Scientific Letters of the University of Zilina 2003, 5(2):37-40 | DOI: 10.26552/com.C.2003.2.37-40

X-Ray Diffraction Line Profile Analysis of Strongly Textured Thin Films of ZnO

P. Sutta1, Q. Jackuliak2
1 Department of Physics, Faculty of Logistics, Military Academy, Liptovsky Mikulas, Slovakia
2 Department of Technical Physics, Faculty of Electrical Engineering, University of Zilina, Slovakia

ZnO thin films have been deposited on SiO2 -Si and Al-SiO2 -Si substrates by reactive sputtering. X-ray diffractometry was used to determine microstructural disorder parameters in ZnO thin films with strong preferred c-axis orientation. The influence of Al and Al2O3 buffer layer on preferred c-axis orientation and microstrain of crystallites was also studied. The microstrains and domain size showed only a small dependence on the preference of a buffer layer, but they depend on the thickness of ZnO thin film. The stress gradient along the c-axis was observed in all of studied samples.

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Published: June 30, 2003  Show citation

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Sutta, P., & Jackuliak, Q. (2003). X-Ray Diffraction Line Profile Analysis of Strongly Textured Thin Films of ZnO. Communications - Scientific Letters of the University of Zilina, 5(2), 37-40. doi: 10.26552/com.C.2003.2.37-40
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