Communications - Scientific Letters of the University of Zilina 2006, 8(1):34-38 | DOI: 10.26552/com.C.2006.1.34-38
Improvement of Power Electronic Structure Characteristics Using Sic Technology - Overview
- 1 Faculty of Electrical Engineering, Department of Mechatronics and Electronics, University of Zilina, Slovakia
This paper is dedicated to the recent unprecedented boom of SiC electronic technology. The contribution deals with a brief survey of those properties. In particular, the differences (both good and bad) between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are given for several large-scale applications at the end of the contribution. The basic properties of SiC material were discussed already at the beginning of 1980's, also in our work place [1].
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Published: March 31, 2006 Show citation
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References
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Go to original source... - DOMES, D., HOFMANN, W., LUTZ, J.: A First Loss Evaluation using a vertical SiC-JFET and a Conventional Si-IGBT in the Bidirectional Matrix Converter Switch Topology, of EPE'05 Conf., Dresden (DE), Sept. 2005, (CD-ROM)
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