Communications - Scientific Letters of the University of Zilina 2014, 16(1):10-14 | DOI: 10.26552/com.C.2014.1.10-14

DLTS Study of InGaAsN/GaAs p-i-n Diode

Jakub Rybar1, Lubica Stuchlikova1, Ladislav Harmatha1, Juraj Jakus1, Jaroslav Kovac1, Beata Sciana2, Damian Radziewicz2, Damian Pucicki2, Wojciech Dawidowski2, Marek Tlaczala2
1 Institute of Electronics and Photonics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava, Slovakia
2 Wrocław University of Technology, Faculty of Microsystem Electronics and Photonics, Wroclaw, Poland

The paper presents an in-depth DLTS characterization of the p-i-n structure based on the InGaAsN/GaAs triple quantum well. Three DLTS evaluation methods were used for evaluation of the measured DLTS spectra. The results of all evaluation methods are compared and discussed. One of the evaluation methods that were used is a novel numerical algorithm that was recently developed. Several material and growth defects were identified. Emission from the quantum well was also observed and identified. The parameters of the energy levels were calculated and compared. The studied InGaAsN/GaAs structure is promising candidate for the solar cell applications and the further refinement of the growth process and technology is encouraged.

Keywords: DLTS, deep energy level, InGaAsN, p-i-n, multijunction solar cells

Published: February 28, 2014  Show citation

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Rybar, J., Stuchlikova, L., Harmatha, L., Jakus, J., Kovac, J., Sciana, B., ... Tlaczala, M. (2014). DLTS Study of InGaAsN/GaAs p-i-n Diode. Communications - Scientific Letters of the University of Zilina, 16(1), 10-14. doi: 10.26552/com.C.2014.1.10-14
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