Communications - Scientific Letters of the University of Zilina 2010, 12(2):19-22 | DOI: 10.26552/com.C.2010.2.19-22

Silicon Nitride Based Non-Volatile Memory Structures with Embedded Si or Ge Nanocrystals

Zsolt J. Horvath1, P. Basa2, T. Jaszi2, A. E. Pap2, Gy. Molnar2, A. I. Kovalev3, D. L. Wainstein3, T. Gerlai2, P. Turmezei4
1 Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, Budapest, Hungary and Obuda University, Kando Kalman Faculty of Electrical Engineering, Institute of Microelectronics and Technology, Budapest, Hungary
2 Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, Budapest, Hungary
3 Surface Phenomena Researches Group (SPRG), CNIICHERMET, Moscow, Russia
4 Obuda University, Kando Kalman Faculty of Electrical Engineering, Institute of Microelectronics and Technology, Budapest, Hungary

Memory structures with an embedded sheet of separated Si or Ge nanocrystals were prepared by low pressure chemical vapour deposition using a Si3N4 control and SiO2 tunnel layers. It was obtained that a properly located layer of semiconductor nanocrystals can improve both the charging and retention behaviour of the MNOS structures simultaneously. Memory window width of above 6 V and retention time of 272 years was achieved for charging pulses of 15 V, 10 ms.

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Published: June 30, 2010  Show citation

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Horvath, Z.J., Basa, P., Jaszi, T., Pap, A.E., Molnar, G., Kovalev, A.I., ... Turmezei, P. (2010). Silicon Nitride Based Non-Volatile Memory Structures with Embedded Si or Ge Nanocrystals. Communications - Scientific Letters of the University of Zilina, 12(2), 19-22. doi: 10.26552/com.C.2010.2.19-22
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