Communications - Scientific Letters of the University of Zilina 2017, 19(3):21-25 | DOI: 10.26552/com.C.2017.3.21-25

Analysis of Photoluminiscence in the NCSI-DMA System

Stanislav Jurecka1, Kentaro Imamura2, Taketoshi Matsumoto2, Hikaru Kobayashi2
1 Institute of Aurel Stodola, University of Zilina, Liptovsky Mikulas, Slovakia
2 Institute of Scientific and Industrial Research, Osaka University and CREST, Japan Science and Technology Agency, Ibaraki, Japan

Silicon nanocrystalline particles (ncSi) were fabricated from the Si swarf using the beads milling method. Observed photoluminiscence spectra (PL) of the ncSi in hexane with the dimethylanthracene molecules (DMA) show photoluminescence peaks at energies of 2.55, 2.75, 2.92, and 3.09 eV. The shape of PL spectra corresponds to the vibronic structure of adsorbed DMA molecules. The PL intensity of the ncSi-DMA system increases by ~3000 times by adsorption of DMA on Si nanoparticles. The PL enhancement results from an increase in absorption probability of incident light by DMA caused by adsorption on the surface of ncSi. Theoretical model of the PL experiment was constructed and resulting model parameters were used in analysis of possible PL transitions and charge transfer processes.

Keywords: semiconductor; silicon nanocrystal; DMA; photoluminiscence

Published: September 30, 2017  Show citation

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Jurecka, S., Imamura, K., Matsumoto, T., & Kobayashi, H. (2017). Analysis of Photoluminiscence in the NCSI-DMA System. Communications - Scientific Letters of the University of Zilina, 19(3), 21-25. doi: 10.26552/com.C.2017.3.21-25
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