Communications - Scientific Letters of the University of Zilina 2023, 25(3):C56-C61 | DOI: 10.26552/com.C.2023.057

Efficiency Comparison of Si Igbt and Sic Mosfet Based Three-Phase Inverters

Zdeno Biel1,*, Marcel Pčola1, Jozef Ondrejička1, Marek Franko ORCID...1, Michal Frivaldský ORCID...2
1 EVPU a.s., Nova Dubnica, Slovakia
2 Faculty of Electrical Engineering and Information Technologies, University of Zilina, Zilina, Slovakia

This article deals the implementation of a SiC MOSFETs in a three-phase inverter module, intended for use in auxiliary converters for powering electrical appliances of railway wagons. The basic properties of the SiC semiconductor elements and their differences, compared to IGBT modules, are summarized here. The given block diagram describes the individual blocks of the inverter module and their interconnection. Finally, a measuring setup for measuring the efficiency of inverters is presented. The measured efficiency values of the proposed SiC inverter and the original solution with IGBT modules are compared in the given graphs.

Keywords: wide band gap, converter, silicon carbide, inverter, efficiency
Grants and funding:


This publication was realized with support of Operational Program Integrated Infrastructure 2014 - 2020 of the project: Innovative Solutions for Propulsion, Power and Safety Components of Transport Vehicles, code ITMS 313011V334, co-financed by the European Regional Development Fund.

Conflicts of interest:

The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.

Received: May 12, 2023; Accepted: June 14, 2023; Prepublished online: June 27, 2023; Published: July 11, 2023  Show citation

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Biel, Z., Pčola, M., Ondrejička, J., Franko, M., & Frivaldský, M. (2023). Efficiency Comparison of Si Igbt and Sic Mosfet Based Three-Phase Inverters. Communications - Scientific Letters of the University of Zilina, 25(3), C56-61. doi: 10.26552/com.C.2023.057
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