Communications - Scientific letters of the University of Zilina X:X | DOI: 10.26552/com.C.2025.047

Evaluation of Silicone Carbide Mosfet Driving Circuit Performance

Veronika Švárna, Michal Frivaldský ORCID...^*

Department of Mechatronics and Electronics, Faculty of Electrical Engineering and Information Technologies, University of Zilina, Zilina, Slovakia

The performances of different driving circuits configurations designed for silicon carbide MOSFET transistors are compared in this research. The simulation of the double-pulse test (DPT) was performed with the use of three driving circuit configurations. The SiC MOSFET NTH4L022N120M3S has great dynamic parameters, which made it suitable for the DPT simulation. It was performed with six different driving voltage ranges, all within the range between -10 V and 20 V. The results were taken across the wide range of driving resistances placed between the driver and the SiC MOSFET, where the switching losses were taken. Drawing from the observed measurements and derived plots, the optimal UGS driving interval for managing the SiC MOSFET transistor is determined to be -10 V/20 V when using a circuit design that incorporates both turn-on and turn-off resistors and diodes.

Keywords: silicon carbide, power transistor, driving circuit, double pulse test, energy losses

Grants and funding:

The authors would like to thank the National grant agency APVV for project funding APVV-21-0462 and to national grant agency Vega for project funding 1/0274/24.

Conflicts of interest:

The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.

Received: May 6, 2025; Accepted: July 9, 2025; Prepublished online: August 27, 2025